Microwave Field-Effect Transistors: Theory, Design, and Applications

AUTHOR: Raymond S. Pengelly
FORMAT: Hardcover, 704 pages
PUBLISHED: Third edition, 1994
ISBN: 1-884932-50-9

Covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations. Perhaps the most comprehensive text on GaAs FET technology and its practical application.

BACK COVER
This is the third edition of Microwave Field-Effect transistors written by Raymond S. Pengelly. It covers the use of MESFET devices in microwave circuits, such as low-noise amplifiers, mixers, oscillators, power amplifiers, switches and multipliers. This text is a classic reference for all engineers involved in the development of solid state microwave devices.

TABLE OF CONTENTS

• Preface
• Foreword
• Biography
• 1—Introduction
• 2—GaAs FET Theory-Small Signal
• 3—GaAs FET Theory-Power
• 4—Requirements and Fabrication of GaAs FETs
• 5—The Design of Transistor Amplifiers
• 6—FET Mixers
• 7—GaAs FET Oscillators
• 8—FET and IC Packaging
• 9—Novel FET Circuits
• 10—Gallium Arsenide integrated Circuits
• 11—Other III-V Materials and Devices
• Index